Material dependence of hydrogen diffusion: implications for NBTI degradation

By A. Krishnan, C. Chancellor, S. Chakravarthi, P. Nicollian, V. Reddy, A. Varghese, R. Khamankar, S. Krishnan. IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005

186 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/07f3c03518c266b98cfe21fc734f3019b61b234f

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation (2007, background): “Although NBTI was identified as a reliability concern in integrated circuits since the mid-1960s [1], its significance became particularly important below the 130-nm technology node [2]–[7], as gate oxide thickness was scaled below Manuscript received January 10, 2007; revised April 26, 2007.”
Predictive Modeling of the NBTI Effect for Reliable Design (2006, background): “This is because H2/H diffusion is faster in oxide and it anneals the broken Si-H bonds very quickly [3].”
Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology (2007, background): “The fast diffusion rate of H2 in the oxide [16], along with the small thickness of the oxide, leads to a very small difference between the H2 concentration at the Si/SiO2 interface and the SiO2/poly interface.”
A two-stage model for negative bias temperature instability (2009, background): “• Using CV measurements, NBTI has been shown to be due to donor-like defects [10, 41, 42].”
A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “The H/H2 RD model for ΔNIT [8], [18], [19], [41] and the framework of uncorrelated ΔNIT, ΔNHT, and ΔNOT [11], [14] are discussed in Section IV to explain dc stress and recovery.”
The Impact of NBTI Effect on Combinational Circuit: Modeling, Simulation, and Analysis (2010, background): “Digital Object Identifier 10.1109/TVLSI.2008.2008810 Fig. 1. degradation for dynamic NBTI (silicon data from [ 10 ]).”
On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007, methodology): “Moreover, majority of H2 diffusion (for stress time window considered here) is expected to take place in poly-Si [4].”
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, background): “diffuses in the polysilicon gate contact [42], such an extension is clearly pointless for dispersive hole transport.”