James H. Stathis

Electrical and Electronic Engineering · 2000–2006

A researcher in the Science corpus: 4 papers; trusts 2 researchers and is trusted by 6 researchers here, as inferred from the citation graph.

Subfields

Whom James H. Stathis trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. M. A. Alam
  2. Ben Kaczer
  3. Souvik Mahapatra

Who trusts James H. Stathis overall

  1. Dieter K. Schroder
  2. Xiaojun Li
  3. Jordi Suñé
  4. Jin Qin
  5. Hans Reisinger
  6. Joseph B. Bernstein
  7. Andreas Kerber
  8. Cristian Constantinescu
  9. Daniele Ielmini

Papers from James H. Stathis's perspective

Ordered by how strongly the researchers James H. Stathis trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  2. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
  3. A comprehensive framework for predictive modeling of negative bias temperature instability (2004 IEEE International Reliability Physics Symposium. Proceedings)
  4. Physical mechanisms of negative-bias temperature instability
  5. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)
  6. The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (IEEE International Reliability Physics Symposium)
  7. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
  8. Dynamic NBTI of PMOS transistors and its impact on device lifetime (2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.)
  9. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
  10. Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements (2006 IEEE International Reliability Physics Symposium Proceedings)

Their papers