Xiaojun Li

Electrical and Electronic Engineering · 2008

A researcher in the Science corpus: 1 paper; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Xiaojun Li trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. James H. Stathis
  2. Ben Kaczer
  3. Jayanth Srinivasan
  4. M. A. Alam
  5. Sarita V. Adve

Papers from Xiaojun Li's perspective

Ordered by how strongly the researchers Xiaojun Li trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
  2. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
  3. A comprehensive framework for predictive modeling of negative bias temperature instability (2004 IEEE International Reliability Physics Symposium. Proceedings)
  4. A comprehensive model for PMOS NBTI degradation: Recent progress (Microelectronics and reliability)
  5. NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] (IEEE International Electron Devices Meeting 2003)
  6. NBTI degradation: From physical mechanisms to modelling (Microelectronics and reliability)
  7. Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling (IEEE Electron Device Letters)
  8. Ultrathin gate oxide reliability: physical models, statistics, and characterization
  9. The case for lifetime reliability-aware microprocessors (Proceedings. 31st Annual International Symposium on Computer Architecture, 2004.)
  10. On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)

Their papers