Asen Asenov
Electrical and Electronic Engineering · 2001–2011
A researcher in the Science corpus: 12 papers; trusts 4 researchers and is trusted by 8 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 23 citations into it; #3,253 of 16,539 by trust here, #5,458 by citations
Whom Asen Asenov trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Asen Asenov overall
- Andrew R. Brown
- Gareth Roy
- Xingsheng Wang
- Savas Kaya
- John H. Davies
- Tibor Grasser
- Fikru Adamu-Lema
- Scott Roy
- David Esseni
- Gabriela Slavcheva
Papers from Asen Asenov's perspective
Ordered by how strongly the researchers Asen Asenov trusts endorse each paper. Same corpus, a different order for every researcher.
- Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
- AND T
- Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
- RTS amplitudes in decananometer MOSFETs: 3-D simulation study
- Γ and B
- Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
- Temperature-Dependent Thermal Conductivity of Undoped Polycrystalline Silicon Layers
- High-performance CMOS variability in the 65-nm regime and beyond (IBM Journal of Research and Development)
- Process Technology Variation (IEEE Transactions on Electron Devices)
- Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture
Their papers
- RTS amplitudes in decananometer MOSFETs: 3-D simulation study (2003) — 254 citations
- Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations (2002) — 223 citations
- Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study (2001) — 237 citations
- Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness (2003) — 624 citations
- Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs (2003) — 599 citations
- Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study (2011) — 136 citations
- Si/SiGe heterostructure parameters for device simulations (2004) — 166 citations
- Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs (2006) — 297 citations
- Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture (2007) — 143 citations
- Statistical variability and reliability in nanoscale FinFETs (2011) — 280 citations
- A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs (2007) — 146 citations
- Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$ (2007) — 144 citations