The Universality of NBTI Relaxation and its Implications for Modeling and Characterization

By Tibor Grasser, W. Gos, V. Sverdlov, Ben Kaczer. 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007

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Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012, methodology): “The following simple analytical expression gives excellent agreement with the numerical solution of the RD model [23]”
Ubiquitous relaxation in BTI stressing—New evaluation and insights (2008, result): “Then, by making an assumption about the behavior of BTI recovery [10,11], these short individual traces can be fitted together and the recoverable R and permanent P components of BTI degradation can be separated, independently evaluated and extrapolated to operating conditions.”
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, methodology): “The conventional RD theory predicts universal recovery, meaning that, when ΔVth is normalized to its value at the end of stress, it depends only on the ratio of the stress and relaxation times ts and tr [31].”