On the structural origins of ferroelectricity in HfO2 thin films

By Xiahan Sang, E. Grimley, Tony Schenk, Uwe Schroeder, James M. LeBeau. 2015

575 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8b54d7e7bc4cabbf88235daf083f464a0b6793ba

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Tony Schenk
4. James M. LeBeau
5. E. Grimley
6. Hyunsang Hwang
7. Seungyeol Oh
8. Hyungwoo Kim

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. Tony Schenk
4. James M. LeBeau
5. E. Grimley
6. Min Hyuk Park

Citations in the corpus

• Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering (2021, background): “Rather, a non-centrosymmetric polar orthorhombic (Pca21) phase (o-phase), which is extremely close in free energy to the equilibrium nonpolar phases, is believed to be the structural origin of the ferroelectric properties observed in HfO2 based thin films [2, 15].”
• Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 (2017, methodology): “Polarization across the O1/O2 domain wall can be assessed by position-averaged convergent beam electron diffraction (PACBED), where missing mirror symmetry in the pattern corresponds to a lack of inversion symmetry in the material.(11,33) This occurs for the Pca21 orthorhombic phase along the [001]o”