Kevin J. Chen
Condensed Matter Physics · 2005–2021
A researcher in the Science corpus: 17 papers; trusts 7 researchers and is trusted by 14 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 132 citations into it; #358 of 1,948 by trust here, #208 by citations
- Electrical and Electronic Engineering — 122 citations into it; #6,036 of 16,539 by trust here, #5,046 by citations
- Electronic, Optical and Magnetic Materials — 67 citations into it; #2,055 of 2,886 by trust here, #1,855 by citations
- Materials Chemistry — 17 citations into it; #8,918 of 11,513 by trust here, #8,144 by citations
Whom Kevin J. Chen trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Kevin J. Chen overall
Papers from Kevin J. Chen's perspective
Ordered by how strongly the researchers Kevin J. Chen trusts endorse each paper. Same corpus, a different order for every researcher.
- Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications (IEEE Transactions on Electron Devices)
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
- Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
- AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz (IEEE Electron Device Letters)
- Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
- Punch-through in short-channel AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
Their papers
- Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT (2009) — 147 citations
- GaN-on-Si Power Technology: Devices and Applications (2017) — 1,258 citations
- High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment (2005) — 588 citations
- Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006) — 492 citations
- Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (2017) — 238 citations
- Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology (2011) — 169 citations
- Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors (2011) — 160 citations
- High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors (2008) — 145 citations
- Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs (2019) — 155 citations
- Gallium nitride-based complementary logic integrated circuits (2021) — 277 citations
- Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019) — 149 citations
- The 2018 GaN power electronics roadmap (2018) — 1,106 citations
- VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (2018) — 143 citations
- 600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse (2013) — 246 citations
- High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique (2013) — 149 citations
- Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film (2012) — 222 citations
- AlGaN-GaN double-channel HEMTs (2005) — 137 citations