Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

By Oliver Ambacher, B. Foutz, J. Smart, J. Shealy, N. Weimann, K. Chu, M. Murphy, A. Sierakowski, W. Schaff, L. Eastman and 3 more. 2000

1,607 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/dc634dd75d91935bff338a2ba2883fa7323b2d67

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Kevin J. Chen
2. Oliver Ambacher
3. Tomás Palacios
4. YiFeng Wu

In Electronic, Optical and Magnetic Materials

1. Tomás Palacios
2. Kevin J. Chen
3. YiFeng Wu

In Materials Chemistry

1. Tomás Palacios
2. Kevin J. Chen

Citations in the corpus

• GaN on Si Technologies for Power Switching Devices (2013, background): “We can assume that the thickness of the AlN layer in the SLs structure is almost comparable with the critical thickness, as the Matthews and Blakeslee [19] model is reported to give a smaller value than the actual critical thickness.”
• The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs (2012, neutral): “[20].”
• Comprehensive Topological Analysis of Conductive and Inductive Charging Solutions for Plug-In Electric Vehicles (2012, methodology): “The GaN FETs offer additional advantages in terms of carrier mobility, higher critical electric field, and charge density [71], [72].”
• Gas sensitive GaN/AlGaN-heterostructures (2002, background): “[1] O.”