Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

By Hanxing Wang, Jin Wei, Ruiliang Xie, Cheng Liu, Gaofei Tang, Kevin J. Chen. IEEE transactions on power electronics, 2017

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VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (2018, background): “[8] point out that the positive VTH shift stems from the excessive negative space charges in the p-GaN layer caused by electron injection.”
Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, methodology): “12 [29], the positive VTH shift can result in a significant increase in dynamic RON at a relatively low onstate gate voltage (VGS,ON) below 4 V.”
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs (2019, background): “gested, including hole emission from the p-GaN layer, which causes a deficiency of holes [17], [18]; electron trapping in the”
Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses (2019, background): “The results are consistent with a general understanding of GaN devices from previous works [10], [12], [13].”