Wanjun Chen
Condensed Matter Physics · 2008–2009
A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 5 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 9 citations into it; #988 of 1,948 by trust here, #1,295 by citations
Whom Wanjun Chen trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Wanjun Chen overall
Papers from Wanjun Chen's perspective
Ordered by how strongly the researchers Wanjun Chen trusts endorse each paper. Same corpus, a different order for every researcher.
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (IEEE Electron Device Letters)
- High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
- Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
- Guide to references on III-V semiconductor chemical etching
- Leakage mechanism in GaN and AlGaN Schottky interfaces
- Wet etching of GaN, AlN, and SiC : a review
- Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
- Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride