Shu Yang
Condensed Matter Physics · with Sheng · 2019
A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 32 citations into it
- Electrical and Electronic Engineering — 27 citations into it
Whom Shu Yang trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Shu Yang's perspective
Ordered by how strongly the researchers Shu Yang trusts endorse each paper. Same corpus, a different order for every researcher.
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (IEEE transactions on power electronics)
- VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (IEEE Electron Device Letters)
- 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance (IEEE Electron Device Letters)
- Punch-through in short-channel AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
- Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain (International Symposium on Power Semiconductor Devices and IC's)
- Trapping effects in GaN and SiC microwave FETs (Proceedings of the IEEE)
- Carbon impurities and the yellow luminescence in GaN
- Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
- GaN-on-Si Power Technology: Devices and Applications (IEEE Transactions on Electron Devices)