Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
By W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura. IEEE Transactions on Electron Devices, 2006
490 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/e50e62981e70a4ae4756250603a77b668be467d8
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In Condensed Matter Physics
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Citations in the corpus
- GaN Power Transistors on Si Substrates for Switching Applications (2010, background): “Several types of device structures were demonstrated, which has a p-typed (Al)GaN semiconductor under the gate [20], a recess-gate structure [ 25 ], or a fluorine-treated technique [26].”
- GaN on Si Technologies for Power Switching Devices (2013, background): “Possible solution is thin AlGaN combined with recessed etching or fluorine doping, which still sacrifices lowering the on-state resistance [22], [23].”
- AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (2008, methodology): “Several techniques for the normally-off operation of the AlGaN/GaN HFETs have been reported so far, such as using a thin AlGaN barrier layer [5]–[7], a recessed gate structure [8], [9], a fluoride-based plasma treatment [10], [11], a p-type gate structure [12]–[14], and using a nonpolar a-plane chan”
- Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics (2010, background): “6 shows the benchmark of Ids and Vth for the published enhancement-mode GaN FETs which have high three-terminal breakdown voltages over 90 V [5]–[13].”
- Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage (2017, background): “AlGaN/GaN HEMTs have achieved normally-off operation with a high breakdown voltage, in a recessed gate structure [5] and in a gate injection transistor (GIT) [6].”
- 600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse (2013, methodology): “A number of techniques, including gate recess [2]–[4], p-type III-nitride gate [5]–[7], fluorine plasma ion implantation [8], and gate-controlled tunnel junction [9] have been proposed and demonstrated to realize normally-OFF operation based on GaN-based heterojunctions.”
- Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation (2007, background): “Fig. 13 summarizes the state-of-the-art performances of the normally-off GaN-based power transistors, as compared with those of SiC and Si-based power transistors [3], [ 4 ], [9]–[13].”