Tohru Oka

Condensed Matter Physics · 2008–2019

A researcher in the Science corpus: 4 papers; trusts 2 researchers and is trusted by 6 researchers here, as inferred from the citation graph.

Subfields

• Condensed Matter Physics — 34 citations into it; #631 of 1,948 by trust here, #817 by citations
• Electronic, Optical and Magnetic Materials — 16 citations into it; #673 of 2,886 by trust here, #2,156 by citations

Whom Tohru Oka trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Kei May Lau

Who trusts Tohru Oka overall

1. Edward A. Jones Jr.
2. Jiabei He
3. Gaofei Tang
4. Fred Wang
5. Kevin J. Chen
6. Burak Ozpineci
7. Yuhao Zhang

Papers from Tohru Oka's perspective

Ordered by how strongly the researchers Tohru Oka trusts endorse each paper. Same corpus, a different order for every researcher.

1. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
2. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications (IEEE Transactions on Electron Devices)
3. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
4. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
5. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (IEEE Transactions on Electron Devices)
6. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation (IEEE Transactions on Electron Devices)
7. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
8. 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
9. High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)
10. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (IEEE Electron Device Letters)

Their papers

• Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV (2014) — 159 citations
• AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (2008) — 363 citations
• Recent development of vertical GaN power devices (2019) — 163 citations
• 1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation (2015) — 221 citations