Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology

By Kevin J. Chen, Chunhua Zhou. 2011

169 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3fe45801a9f8f736e157e277ad03edeefcd58406

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Matteo Meneghini
2. Gaofei Tang
3. Gaudenzio Meneghesso
4. Jin Wei
5. Kevin J. Chen
6. Oliver Hilt

In Electrical and Electronic Engineering

1. Gaofei Tang
2. Matteo Meneghini
3. Kevin J. Chen
4. Gaudenzio Meneghesso
5. Oliver Hilt

Citations in the corpus

• Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (2017, methodology): “sistor can be fabricated using p-GaN gate technique [3]–[7], gate recess [7]–[9] or plasma treatment [10]–[12].”
• VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (2018, unknown): “[3] K.”
• Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate (2017, background): “[15] indicate that on recent devices an excellent stability of fluorine atoms can be obtained through F-plasma ion implantation.”
• 600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse (2013, background): “NORMALLY-OFF operation is of necessity when gallium nitride-based power transistors are targeting at high-voltage power switching applications because of the fail-safe requirement in a power conversion system [1].”