High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors

By Wanjun Chen, King-yuen Wong, Wei Huang, Kevin J. Chen. 2008

145 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fb32b8338bb771c460f0936c25bce03523d5bbc1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Kevin J. Chen
2. King-yuen Wong
3. Wanjun Chen

In Electrical and Electronic Engineering

1. Kevin J. Chen

Citations in the corpus

• Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT (2009, methodology): “The sample used in this letter and the fabrication process are similar to those reported in [12], with the exception of no passivation layer for this work.”