Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

By Yong Cai, Yugang Zhou, Kei May Lau, Kevin J. Chen. IEEE Transactions on Electron Devices, 2006

492 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/26ad593c9453b07feff8c65c01067f99658a0e00

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Kevin J. Chen
2. Gaudenzio Meneghesso
3. Matteo Meneghini
4. King-yuen Wong
5. Wanjun Chen
6. Enrico Zanoni
7. Tohru Oka
8. T. Nozawa

In Electronic, Optical and Magnetic Materials

1. Kevin J. Chen
2. Tohru Oka
3. T. Nozawa
4. Matteo Meneghini
5. Enrico Zanoni
6. Gaudenzio Meneghesso

In Materials Chemistry

1. Tohru Oka
2. T. Nozawa
3. Kevin J. Chen
4. Debdeep Jena
5. Huili Grace Xing
6. S. Karpov

Citations in the corpus

• Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT (2009, methodology): “The key fabrication process of the L-FER is the incorporation of fluorine ions under the Schottky contact by CF4 plasma treatment that effectively depletes the 2DEG under the Schottky contact region and then pinches off the conduction path [14].”
• AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance (2008, background): “This performance shows that both high current density and transconductance can be achieved in a single AlN/GaN HEMT with insulated gates.”
• GaN on Si Technologies for Power Switching Devices (2013, background): “Possible solution is thin AlGaN combined with recessed etching or fluorine doping, which still sacrifices lowering the on-state resistance [22], [23].”
• A Survey of Wide Bandgap Power Semiconductor Devices (2014, unknown): “a fluorine-based plasma treatment of the gate region [55] instead of reducing the AlGaN thickness as in the recessed-gate”
• Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate (2016, methodology): “fluorine plasma treatment [7], p-type gate structure employing a p-GaN [2], [8]–[13], or a p-AlGaN gate [3], [14]–[16].”
• AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation (2007, background): “Then, if the InGaN cap layer is introduced only in the gate region, it is possible to decrease the source parasitic resistance even in the normally off HEMTs because the carrier in the access region is not depleted.”
• AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (2008, methodology): “Several techniques for the normally-off operation of the AlGaN/GaN HFETs have been reported so far, such as using a thin AlGaN barrier layer [5]–[7], a recessed gate structure [8], [9], a fluoride-based plasma treatment [10], [11], a p-type gate structure [12]–[14], and using a nonpolar a-plane chan”