Gaofei Tang
Condensed Matter Physics · 2017–2019
A researcher in the Science corpus: 3 papers; trusts 3 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 25 citations into it
- Electrical and Electronic Engineering — 23 citations into it
- Electronic, Optical and Magnetic Materials — 10 citations into it
Whom Gaofei Tang trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Gaofei Tang's perspective
Ordered by how strongly the researchers Gaofei Tang trusts endorse each paper. Same corpus, a different order for every researcher.
- Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation (IEEE Transactions on Electron Devices)
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
- Evaluation of the switching characteristics of a gallium-nitride transistor (2011 IEEE Energy Conversion Congress and Exposition)
- Application-based review of GaN HFETs (IEEE Workshop on Wide Bandgap Power Devices and Applications)
- Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate (IEEE Transactions on Electron Devices)
- Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
- VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (IEEE Electron Device Letters)
- 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance (IEEE Electron Device Letters)
- AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (IEEE Electron Device Letters)
- First-principles calculations for defects and impurities: Applications to III-nitrides
Their papers
- Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (2017) — 238 citations
- Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs (2019) — 155 citations
- VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (2018) — 143 citations