VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress

By Jiabei He, Gaofei Tang, Kevin J. Chen. IEEE Electron Device Letters, 2018

143 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/c09296d9136c53c6863bd5ea56ca3249955fcb9c

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In Condensed Matter Physics

1. Gaofei Tang
2. Shu Yang
3. Kuang Sheng
4. Shaowen Han
5. Jin Wei
6. Kevin J. Chen
7. Jiabei He

In Electronic, Optical and Magnetic Materials

1. Gaofei Tang
2. Kevin J. Chen
3. Shu Yang
4. Kuang Sheng
5. Shaowen Han
6. Jiabei He

Citations in the corpus

• Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “The positive VTH shift induced by a positive gate bias at on-state has been widely observed in p-GaN HEMTs with a Schottky gate contact and attributed to electron injection from the 2DEG channel and getting trapped in the AlGaN barrier layer [31], [32], metal/p-GaN space charge region [28], and/or p”
• Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs (2019, background): “region [20], or at the p-GaN/AlGaN interface [21].”