Jin Wei

Condensed Matter Physics · Nature Electronics · 2017–2021

A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Jin Wei trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Kevin J. Chen
  2. Edward A. Jones Jr.

Who trusts Jin Wei overall

  1. Shu Yang

Papers from Jin Wei's perspective

Ordered by how strongly the researchers Jin Wei trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
  2. Evaluation of the switching characteristics of a gallium-nitride transistor (2011 IEEE Energy Conversion Congress and Exposition)
  3. Application-based review of GaN HFETs (IEEE Workshop on Wide Bandgap Power Devices and Applications)
  4. Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate (IEEE Transactions on Electron Devices)
  5. Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
  6. VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (IEEE Electron Device Letters)
  7. p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current (IEEE Electron Device Letters)
  8. Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology
  9. Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (IEEE transactions on power electronics)
  10. 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)

Their papers