High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

By Ye Wang, Maojun Wang, B. Xie, C. Wen, Jinyan Wang, Y. Hao, Wengang Wu, Kevin J. Chen, B. Shen. IEEE Electron Device Letters, 2013

149 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/ac21072d76ac99acced3984e6b1b034d18479316