Punch-through in short-channel AlGaN/GaN HFETs

By Michael J. Uren, K. Nash, R. Balmer, T. Martin, E. Morvan, N. Caillas, S. Delage, D. Ducatteau, B. Grimbert, J. C. D. Jaeger. IEEE Transactions on Electron Devices, 2006

216 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/85b84bb21fba9ad1058f2991a9c1c3974dba71a7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Kevin J. Chen
2. Michael J. Uren
3. Shu Yang
4. Kuang Sheng
5. Shaowen Han
6. Martin Kuball
7. Oliver Hilt
8. YiFeng Wu

In Electrical and Electronic Engineering

1. Kevin J. Chen
2. Michael J. Uren
3. Martin Kuball
4. Oliver Hilt
5. Shu Yang
6. Kuang Sheng
7. YiFeng Wu
8. Shaowen Han

Citations in the corpus

• AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$ (2010, background): “The subthreshold drain current is mostly dominated by two leakage currents: 1) the injection of electrons into the GaN buffer layer, i.e., the bulk punchthrough [ 4 ], and 2) the Schottky-gate reversebias tunneling leakage current [5], [6].”
• Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012, background): “All distributions studied had sufficiently high doping to suppress significant short-channel effects [5]”
• Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “The C compensation doping, which can induce deep-level acceptor traps [24], is essential to obtain low leakage through the buffer/SRL [44], [47], [48].”
• Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement (2008, methodology): “Breakdown in GaNbased HEMTs and other field-effect devices is, in many cases, initiated by electron current underneath the depletion region of the transistor gate through the insulating buffer layer and known as space-charge injection of electrons into the GaN buffer layer [8], carrier spill-over [9”
• GaN-on-Si Power Technology: Devices and Applications (2017, background): “the lateral punchthrough [8] caused by background impurity (e.”