High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

By Yong Cai, Yugang Zhou, Kevin J. Chen, Kei May Lau. IEEE Electron Device Letters, 2005

588 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e32501c7dcbb7ff536dff15e9859a6bba74dc67f

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Citations in the corpus

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate (2010, background): “Various technologies for developing normally off devices which utilize a Schottky junction gate [4]–[6] or a MOS gate structure”
High-performance E-mode AlGaN/GaN HEMTs (2006, methodology): “... VGS = 0.47 V, maximum drain current of 455 mA/mm, and a current-gain cutoff frequency of 10 GHz in devices with a gate length of 1 µm. By using a 10-nm-thick AlGaN cap layer, Endoh et al. [11] have fabricated unrecessed E-mode devices with a gate length of 120 nm. These devices have a threshold ”
High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique (2013, methodology): “Normally-OFF operation on AlGaN/GaN heterostructures has been obtained with several postepitaxy approaches, such as gate recess [4]–[8], fluorine plasma treatment [9], [10], and selective AlGaN barrier layer oxidation [11].”
Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer (2008, methodology): “In this letter, we report for the first time an E-mode CAVET achieved by CF4 plasma treatment [ 8 ].”
Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “incorporation [15], [16], and fully/partially recessed barrier [17]–[19] in the gate region.”
AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation (2007, background): “Then, if the InGaN cap layer is introduced only in the gate region, it is possible to decrease the source parasitic resistance even in the normally off HEMTs because the carrier in the access region is not depleted.”
600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse (2013, methodology): “A number of techniques, including gate recess [2]–[4], p-type III-nitride gate [5]–[7], fluorine plasma ion implantation [8], and gate-controlled tunnel junction [9] have been proposed and demonstrated to realize normally-OFF operation based on GaN-based heterojunctions.”
Tri-Gate Normally-Off GaN Power MISFET (2012, background): “First of all, low on-resistance (Ron) is difficult to achieve with the conventional normally-off GaN technologies, such as plasma treatment [2]–[5] and gate recess [6]–[8] which degrade channel mobility.”
Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics (2010, methodology): “There are several approaches to realizing an enhancement-mode operation for GaN HEMTs such as a gate-recess structure, F-treatment [2], [14], and an introduction of a cap layer [3].”
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006, methodology): “The techniques described in this paper enable the fabrication of E-mode HEMTs as well as the monolithic integration of E/D-mode HEMTs, both of which are expected to provide useful circuit applications.”