AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

By Vipan Kumar, Wu Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Khan, I. Adesida. IEEE Electron Device Letters, 2002

202 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/ee5567b9774fa543d88a70b789aa0590e762eeb1

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In Condensed Matter Physics

1. Kevin J. Chen
2. R. Balmer
3. Michael J. Uren
4. Umesh K. Mishra

In Electrical and Electronic Engineering

1. Kevin J. Chen
2. R. Balmer
3. Kei May Lau
4. Michael J. Uren
5. Umesh K. Mishra

In Electronic, Optical and Magnetic Materials

1. Kevin J. Chen

Citations in the corpus

• High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment (2005, background): “Up to now, the focus has been to improve the performance of depletion-mode (D-mode) AlGaN/GaN HEMTs [ 1 ]‐[4].”
• Punch-through in short-channel AlGaN/GaN HFETs (2006, background): “High-speed operation is possible with reportsof transition frequency exceeding 120 GHz [ 2 ].”