Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

By Sen Huang, Shu Yang, J. Roberts, Kevin J. Chen. 2011

160 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/257a1fef510d9102150aff0c8179db23a8d8aaee

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Shu Yang
2. Kuang Sheng
3. Shaowen Han
4. Kevin J. Chen

In Electrical and Electronic Engineering

1. Shu Yang
2. Kuang Sheng
3. Kevin J. Chen
4. Shaowen Han

In Electronic, Optical and Magnetic Materials

1. Kevin J. Chen
2. Shu Yang
3. Kuang Sheng
4. Shaowen Han

Citations in the corpus

• Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “On the other hand, the extensive investigations of gate trapping in [28], [30], [32], [33], [39], and [40] mainly focus on the evaluation of VTH shift, whereas the impact of VTH shift on the dynamic RON [29], [41], [42] in both normally on and normally off GaN transistors are of particular interest ”
• High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique (2013, background): “7 V between the up and down sweep of the gate bias from −1 to 8 V, which is most likely caused by acceptor-like states in the Al2O3 dielectric layer or at the Al2O3/GaN interface [15], [16].”