Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

By X. Hu, G. Simin, J. Yang, M. Khan, R. Gaska, Michael S. Shur. 2000

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AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation (2007, background): “In the case of HEMTs without the InGaN cap layer, 2DEG is formed in the AlGaN/GaN interface, which leads to the normally on operation.”
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs (2018, methodology): “GaN-based heterojunction field-effect transistors (HFETs) can be obtained by growing a p-GaN gate on an AlGaN/GaN heterojunction [1]–[3], as shown in Fig.”
A Survey of Wide Bandgap Power Semiconductor Devices (2014, methodology): “Schematic cross section of a p-n gate GaN HEMT [57].”
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, methodology): “Ever since the initial demonstration of the enhancement-mode AlGaN/GaN HEMT in 1996 [36] and furthermore in 2000 [37], several approaches have been used to make normally-OFF GaN-based HEMTs as reviewed previously [38] and more recently [8,39].”
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate (2016, methodology): “fluorine plasma treatment [7], p-type gate structure employing a p-GaN [2], [8]–[13], or a p-AlGaN gate [3], [14]–[16].”
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment (2005, methodology): “Hu et al. [ 6 ] demonstrated an E-mode HEMT with selectively regrown pn junction gates and showed a peak transconductance of 10 mS/mm.”