600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

By Zhikai Tang, Q. Jiang, Yunyou Lu, Sen Huang, Shu Yang, Xi Tang, Kevin J. Chen. IEEE Electron Device Letters, 2013

246 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0a2ef39092943c221d9e0feba751247cb6db858f