Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

By Wanjun Chen, King-yuen Wong, Kevin J. Chen. IEEE Electron Device Letters, 2009

147 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ded74c3603e7792e3c9b7da875785b114a470d00

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Qiang Li
2. Fred C. Lee
3. Zhengyang Liu
4. Xiucheng Huang
5. Shuo Wang
6. Boyi Zhang
7. Yuchen Yang

In Electrical and Electronic Engineering

1. Qiang Li
2. Fred C. Lee
3. Zhengyang Liu
4. Xiucheng Huang
5. Paolo Mattavelli
6. Dushan Boroyevich
7. Zheng Chen
8. Yun Wei Li

Citations in the corpus

• Evaluation and Application of 600 V GaN HEMT in Cascode Structure (2014, methodology): “Several techniques have been developed to provide a built-in modification of the 2DEG under the gated region, providing for normally off behavior [7], [10], [16].”
• Evaluation of the switching characteristics of a gallium-nitride transistor (2011, background): “From the works presented in [4-15], it can be seen that GaN devices are reaching the point of maturity where broader investigation of its impact on switching converters is possible and necessary [16].”