Jiabei He

Condensed Matter Physics · 2018–2019

A researcher in the Science corpus: 2 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Jiabei He trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Tohru Oka
  2. T. Nozawa
  3. Kevin J. Chen
  4. C. Walle

Papers from Jiabei He's perspective

Ordered by how strongly the researchers Jiabei He trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation (IEEE Transactions on Electron Devices)
  2. Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
  3. VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (IEEE Electron Device Letters)
  4. Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (IEEE transactions on power electronics)
  5. First-principles calculations for defects and impurities: Applications to III-nitrides
  6. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance (IEEE Electron Device Letters)
  7. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications (IEEE Electron Device Letters)
  8. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications (IEEE Transactions on Electron Devices)
  9. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
  10. Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)

Their papers