GaN-on-Si Power Technology: Devices and Applications

By Kevin J. Chen, O. Häberlen, A. Lidow, C. Tsai, T. Ueda, Y. Uemoto, YiFeng Wu. IEEE Transactions on Electron Devices, 2017

1,258 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “arising from the spontaneous and piezoelectric polarization effects [1]; 2) lower gate charges (Qg) and nearly one order of magnitude lower output charges (QOSS) than that in the state-of-the-art Si superjunction devices [2]–[6]; and 3) nearzero reverse recovery charges because of the absence of an ”
VTH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress (2018, background): “NORMALLY-OFF GaN-based devices have received increasing demands in power switching applications for the fail-safe operation and simplified gate drive topology [1].”
The 2018 GaN power electronics roadmap (2018, methodology): “The continuing challenges for E-mode MIS devices are: (1) the minimisation of charge trap densities at the insulator/semiconductor interface across the range of barrier and channel III-nitride materials; (2) minimisation of the effect charging–discharging of trap states which gives rise to Vth insta”
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, methodology): “References 1.”
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs (2019, neutral): “meeting the fail-safe requirement [3].”