Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

By Tian-Li Wu, Denis Marcon, S. You, N. Posthuma, B. Bakeroot, S. Stoffels, M. Van Hove, G. Groeseneken, S. Decoutere. IEEE Electron Device Letters, 2015

190 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/94113d0cf29ff96995eb3205c178761f1bae75d1

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Citations in the corpus

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress (2016, background): “literature on the p-GaN gate reliability upon forward bias is limited [6], [7], applicability studies of standard statisti-”
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “[89] revealed that the gate breakdown phenomenon could be explained by the avalanche multiplication in the space charge region of the Schottky metal/p-GaN junction.”
Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs (2017, background): “However, relatively few data on trapping effects affecting the gate reliability of HEMTs with p-type gate are available in literature [19]–[21].”
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs (2018, background): “In low-leakage Schottky gate devices, instead, the reversebiased Schottky junction must withstand a high electric field under gate stress conditions, and gate breakdown might occur due to the formation of stress-induced percolation paths, as in insulated gate devices [14]–[16].”
GaN-on-Si Power Technology: Devices and Applications (2017, background): “p-GaN gate technologies) can result in gate breakdown [19],”
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (2017, background): “The gate characteristics (such as VTH , VGS limitation, and gate leakage current IGSS ) of p-GaN devices are closely related to the structure of the gate stack [19]–[21], [25], [26] (including the choice of gate metal, thickness and p-doping”
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate (2016, background): “Several approaches are being used to achieve e-mode operation: MIS HEMTs [4] with deep gate recess under the gate [5], [6], fluorine plasma treatment [7], p-type gate structure employing a p-GaN [2], [8]–[13], or a p-AlGaN gate [3], [14]–[16].”
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate (2017, methodology): “A replacement of the p-type ohmic contact on top of p-GaN gate layer by a p-type Schottky contact using tungsten [25] or TiN [27] as gate metal can significantly reduce the on-state gate current of the transistor.”