J. McPherson
Electrical and Electronic Engineering · with Shanware · 2000–2010
A researcher in the Science corpus: 4 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 6 citations into it
Whom J. McPherson trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts J. McPherson overall
- Andrea Padovani
- P. Thomas
- Huai Wang
- Ximeng Guan
- Souvik Mahapatra
- M. A. Alam
- Luca Larcher
- S. Satapathy
- Luca Vandelli
Papers from J. McPherson's perspective
Ordered by how strongly the researchers J. McPherson trusts endorse each paper. Same corpus, a different order for every researcher.
- New physics-based analytic approach to the thin-oxide breakdown statistics (IEEE Electron Device Letters)
- Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics
- Multiple-gate SOI MOSFETs
- A continuous, analytic drain-current model for DG MOSFETs
- Beyond the conventional transistor (IBM Journal of Research and Development)
- Modeling of nanoscale gate-all-around MOSFETs (IEEE Electron Device Letters)
- Multiple-gate SOI MOSFETs: device design guidelines
- Ultra-thin oxide reliability for ULSI applications
- The Elements of Statistical Learning
- Some Comments on Cp
Their papers
- Reliability Physics and Engineering: Time-To-Failure Modeling (2010) — 326 citations
- Thermochemical description of dielectric breakdown in high dielectric constant materials (2003) — 390 citations
- Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics (2000) — 173 citations
- Trends in the ultimate breakdown strength of high dielectric-constant materials (2003) — 327 citations