P. B. Kumar
IEEE Transactions on Electron Devices · 2004
A researcher in the Science corpus: 1 paper; trusts 0 researchers and is trusted by 4 researchers here, as inferred from the citation graph.
Who trusts P. B. Kumar overall
Papers from P. B. Kumar's perspective
Ordered by how strongly the researchers P. B. Kumar trusts endorse each paper. Same corpus, a different order for every researcher.
- Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics
- A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)
- A comprehensive framework for predictive modeling of negative bias temperature instability (2004 IEEE International Reliability Physics Symposium. Proceedings)
- Dynamic NBTI of PMOS transistors and its impact on device lifetime (2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.)
- Universal alignment of hydrogen levels in semiconductors, insulators and solutions (Nature)
- Hydrogen-storage materials for mobile applications (Nature)
- New physics-based analytic approach to the thin-oxide breakdown statistics (IEEE Electron Device Letters)
- Semiconductor Device Physics and Design
- Electronic and Optoelectronic Properties of Semiconductor Structures
- A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)