Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

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A two-stage model for negative bias temperature instability (2009, methodology): “Two variants of combined hole trapping and interface state creation are commonly used: (i) initial hole trapping which quickly saturates (within about 1s) and long term degradation dominated by interface state creation according to the RD theory [25].”
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012, background): “The most popularized explanation for BTI invokes an interfacial Si–H breakage process which for longer stress time is controlled by the diffusion of the released hydrogen inside the oxide [10,18–20].”
Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure (2011, background): “Since the generation rate of the interface trap depends on Ex exponentially [11], then this improvement would be significant.”
A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “The H/H2 RD model for ΔNIT [8], [18], [19], [41] and the framework of uncorrelated ΔNIT, ΔNHT, and ΔNOT [11], [14] are discussed in Section IV to explain dc stress and recovery.”
Ubiquitous relaxation in BTI stressing—New evaluation and insights (2008, background): “Scaling of the BTI mechanism with the oxide electric field has been generally accepted [25].”