A comprehensive model for PMOS NBTI degradation: Recent progress

By M. A. Alam, Haldun Kufluoglu, Dhanoop Varghese, Souvik Mahapatra. Microelectronics and reliability, 2007

297 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7624e4f940d4e9d46b214c818f8cff47131de0a9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Tibor Grasser
2. Souvik Mahapatra
3. M. A. Alam
4. Haldun Kufluoglu
5. Dhanoop Varghese
6. A. E. Islam
7. Ben Kaczer
8. Jin Qin

Citations in the corpus

• Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation (2007, background): “I. INTRODUCTION N EGATIVE-BIAS temperature instability (NBTI), as thename suggests, indicates a temperature-accelerated degradation in PMOS devices when it is stressed with negative gate voltage.”
• The Universality of NBTI Relaxation and its Implications for Modeling and Characterization (2007, background): “In particular, the value of the extracted power-law exponent depends significantly on the delay introduced during the measurement [5] [17] [21].”
• Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation (2008, result): “The same equation can be easily derived from the reformatted reaction‐diffusion model by assuming that the interfacetrap saturation is caused by depletion of all Si−H bonds [ 64 ].”