The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
By Y. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, Marco M. Furchi, Thomas Mueller, Tibor Grasser. 2016
247 citations recorded by the source corpus.
The commonly observed hysteresis in the transfer characteristics of MoS2 transistors is typically associated with charge traps in the gate insulator. Since in Si technologies such traps can lead to severe reliability issues, we perform a combined study of both the hysteresis as well as the arguably most important reliability issue, the bias-temperature instability. We use single-layer MoS2 FETs with SiO2 and hBN insulators and demonstrate that both phenomena are indeed due to traps in the gate insulator with time constants distributed over wide timescales, where the faster ones lead to hysteresis and the slower ones to bias-temperature instabilities. Our data show that the use of hBN as a gate insulator considerably reduces the number of accessible slow traps and thus improves the reliability. However, the reliability of hBN insulators deteriorates with increasing temperature due to the thermally activated nature of charge trapping.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/27b4275a9eeff42a62f3b45df86141ea3170a210
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Citations in the corpus
- Hysteresis in the transfer characteristics of MoS2 transistors (2017, background): “Band diagram of the MoS2/SiO2/Si structure (Si is treated as degenerate), at zero (a), positive (b) and negative (c) gate bias, showing that a negative Vgs favors the storage of positive charge at the MoS2/SiO2 interface.”