Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

By Tibor Grasser. Microelectronics and reliability, 2012

546 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/db6bf9163bb51dd32ff33d1133e2387176b8868a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Tibor Grasser
2. Souvik Mahapatra
3. Hans Reisinger
4. M. A. Alam
5. Thomas Aichinger
6. Wolfgang Gustin
7. A. E. Islam
8. Ben Kaczer

Citations in the corpus

• $1/f$ Noise and Defects in Microelectronic Materials and Devices (2015, unknown): “[131], © 2012, Elsevier.”
• Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability (2019, background): “Tunneling time constants are very fast to be responsible for slow traps, and elastic tunneling models [63], [64] have been discarded long ago for the NBTI-effect [65].”
• The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, background): “Furthermore, the stochastic nature of charge trapping and emission will add to the variance [87].”
• A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “and, later, by using a multistate transition model [49], [51]; the semipermanent component is empirically determined [50].”