D. Fleetwood
Electrical and Electronic Engineering · 2002–2018
A researcher in the Science corpus: 11 papers; trusts 18 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 63 citations into it
- Atomic and Molecular Physics, and Optics — 6 citations into it
Whom D. Fleetwood trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- John Robertson
- Paul E. Dodd
- J. Schwank
- Hugh J. Barnaby
- M. Shaneyfelt
- R. Lacoe
- H. Hughes
- J. Felix
- G. Wilk
- Tibor Grasser
Who trusts D. Fleetwood overall
Papers from D. Fleetwood's perspective
Ordered by how strongly the researchers D. Fleetwood trusts endorse each paper. Same corpus, a different order for every researcher.
- Cramming More Components Onto Integrated Circuits
- Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs (IEEE Transactions on Nuclear Science)
- Production and propagation of single-event transients in high-speed digital logic ICs (IEEE Transactions on Nuclear Science)
- Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM (IEEE Transactions on Nuclear Science)
- New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening (IEEE Transactions on Nuclear Science)
- Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology (IEEE Transactions on Nuclear Science)
- Radiation effects in SOI technologies
- Radiation Effects in MOS Oxides (IEEE Transactions on Nuclear Science)
- Radiation-induced edge effects in deep submicron CMOS transistors (IEEE Transactions on Nuclear Science)
- Soft Error Susceptibilities of 22 nm Tri-Gate Devices (IEEE Transactions on Nuclear Science)
Their papers
- Physical mechanisms of negative-bias temperature instability (2005) — 134 citations
- The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors (2004) — 132 citations
- Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices (2002) — 168 citations
- Physical model for enhanced interface-trap formation at low dose rates (2002) — 192 citations
- Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013) — 134 citations
- ELDRS in bipolar linear circuits: A review (2008) — 173 citations
- Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018) — 158 citations
- $1/f$ Noise and Defects in Microelectronic Materials and Devices (2015) — 153 citations
- Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices (2013) — 332 citations
- Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices (2004) — 133 citations
- Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors (2003) — 145 citations