Wolfgang Gustin

Electrical and Electronic Engineering · 2006–2019

A researcher in the Science corpus: 3 papers; trusts 3 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom Wolfgang Gustin trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Tibor Grasser
  2. Ben Kaczer

Who trusts Wolfgang Gustin overall

  1. Tibor Grasser

Papers from Wolfgang Gustin's perspective

Ordered by how strongly the researchers Wolfgang Gustin trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  2. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
  3. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
  4. The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability (IEEE International Reliability Physics Symposium)
  5. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
  6. A comprehensive framework for predictive modeling of negative bias temperature instability (2004 IEEE International Reliability Physics Symposium. Proceedings)
  7. NBTI degradation: From physical mechanisms to modelling (Microelectronics and reliability)
  8. Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (Microelectronics and reliability)
  9. Universal recovery behavior of negative bias temperature instability [PMOSFETs] (IEEE International Electron Devices Meeting 2003)
  10. Analytic modeling of the bias temperature instability using capture/emission time maps (International Electron Devices Meeting)

Their papers