Thomas Aichinger

Electrical and Electronic Engineering · 2009–2019

A researcher in the Science corpus: 5 papers; trusts 3 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom Thomas Aichinger trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Tibor Grasser
  2. Hans Reisinger
  3. Ben Kaczer

Who trusts Thomas Aichinger overall

  1. Tibor Grasser

Papers from Thomas Aichinger's perspective

Ordered by how strongly the researchers Thomas Aichinger trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  2. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  3. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
  4. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
  5. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
  6. A two-stage model for negative bias temperature instability (IEEE International Reliability Physics Symposium)
  7. Two independent components modeling for Negative Bias Temperature Instability (IEEE International Reliability Physics Symposium)
  8. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)
  9. RTS amplitudes in decananometer MOSFETs: 3-D simulation study
  10. First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen

Their papers