The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

By Hans Reisinger, Tibor Grasser, Wolfgang Gustin, C. Schlunder. IEEE International Reliability Physics Symposium, 2010

210 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/af09bcba5a9a17b816eb2e63bb825e37851ce074

How researchers see this paper

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In Electrical and Electronic Engineering

1. Tibor Grasser
2. Souvik Mahapatra
3. M. A. Alam
4. Hans Reisinger
5. Ben Kaczer
6. Thomas Aichinger
7. A. E. Islam
8. Shashank Gupta

Citations in the corpus

• Origin of NBTI variability in deeply scaled pFETs (2010, background): “allows tracing its properties under various stress conditions [ 5 ,6].”
• The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, methodology): “3) The duty-factor (DF)-dependent degradation predicted by the RD theory follows DF, whereas, experimentally, a step-shaped curve is observed, with a very sharp drop of the degradation, even for small deviations from the ac case [25], [36], [37].”
• A Comparative Study of Different Physics-Based NBTI Models (2013, background): “[29], [42], [55], [69] when normalized to dc is characterized by very different “shapes.”