Huili Grace Xing
Materials Chemistry · 2000–2020
A researcher in the Science corpus: 27 papers; trusts 3 researchers and is trusted by 3 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 199 citations into it; #6,532 of 11,513 by trust here, #2,462 by citations
Whom Huili Grace Xing trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Huili Grace Xing overall
Papers from Huili Grace Xing's perspective
Ordered by how strongly the researchers Huili Grace Xing trusts endorse each paper. Same corpus, a different order for every researcher.
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (IEEE Electron Device Letters)
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)
- Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- Power electronics on InAlN/(In)GaN: Prospect for a record performance (IEEE Electron Device Letters)
- High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
- State-of-the-art technologies of gallium oxide power devices
Their papers
- Carrier statistics and quantum capacitance of graphene sheets and ribbons (2007) — 677 citations
- Broadband graphene terahertz modulators enabled by intraband transitions (2012) — 1,033 citations
- Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals. (2013) — 783 citations
- Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy. (2014) — 818 citations
- Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures (2010) — 763 citations
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (2004) — 327 citations
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition (2003) — 145 citations
- Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018) — 222 citations
- Unique prospects for graphene-based terahertz modulators (2011) — 215 citations
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes (2013) — 346 citations
- Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors (2018) — 140 citations
- Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior (2012) — 271 citations
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown (2015) — 188 citations
- Intrinsic electron mobility limits in β-Ga2O3 (2016) — 357 citations
- Heavy doping effects in Mg-doped GaN (2000) — 374 citations
- Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering (2008) — 230 citations
- Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys (2002) — 197 citations
- Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2 (2020) — 139 citations
- Thermal conductivity of crystalline AlN and the influence of atomic-scale defects (2019) — 141 citations
- 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon (2015) — 171 citations