Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures
By J. Simon, V. Protasenko, Chuanxin Lian, Huili Grace Xing, Debdeep Jena. Science, 2010
763 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/178a63627141c7a54839e78b51c1d6a43e2b1810
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- Hongxing Jiang
- Jingyu Lin
- Tomás Palacios
- Min-Chul Sun
- Yuhao Zhang
- Sayeef Salahuddin
- Daniel Piedra
- Ramamoorthy Ramesh
In Condensed Matter Physics
- Gaudenzio Meneghesso
- Yuhao Zhang
- Matteo Meneghini
- Tomás Palacios
- Hongxing Jiang
- Jingyu Lin
- Enrico Zanoni
- Michael J. Uren
In Electrical and Electronic Engineering
- Yuhao Zhang
- Tomás Palacios
- Matteo Meneghini
- Hongxing Jiang
- Jingyu Lin
- Michael J. Uren
- Ramamoorthy Ramesh
- Gaudenzio Meneghesso
Citations in the corpus
- Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions (2010, background): “V i is most similar to the piezoelectric built-in potential in the wide-bandgap polar III–V and II–VI wurzite semiconductor heterostructure”
- Hexagonal boron nitride for deep ultraviolet photonic devices (2014, methodology): “Although various interesting methods and schemes, such as enhancing p-type doping via minimizing the densities of hole compensating centers such as nitrogen vacancies with three (VN3+) or one (VN1+) positive charges [22–26], polarization and piezoelectric doping [27], p-AlGaN graded layers [28, 29],”
- The 2018 GaN power electronics roadmap (2018, background): “polarization-assisted doping [130], has the potential of overcoming the doping challenge.”