Power electronics on InAlN/(In)GaN: Prospect for a record performance

By Jan Kuzmik. IEEE Electron Device Letters, 2001

562 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/48a22ef3cfc50ea02777f244ca6f2b1ecd42585d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Tomás Palacios
2. Xiang Gao
3. Shiping Guo
4. Dong Seup Lee
5. Jean-Francois Carlin
6. George Konstantinidis
7. Dionyz Pogany
8. Aristotelis E. Kostopoulos

In Electronic, Optical and Magnetic Materials

1. Xiang Gao
2. Shiping Guo
3. Dong Seup Lee
4. Tomás Palacios
5. Jean-Francois Carlin
6. E. Feltin
7. M. Gonschorek

In Mechanics of Materials

1. Xiang Gao
2. Shiping Guo
3. Dong Seup Lee
4. Jean-Francois Carlin
5. Tomás Palacios
6. George Konstantinidis
7. Dionyz Pogany
8. Aristotelis E. Kostopoulos

Citations in the corpus

• InAlN/GaN HEMTs: a first insight into technological optimization (2006, background): “However, according to theoretical calculations [2], [3], In Al N/(In)GaN”
• InAlN/GaN HEMTs With AlGaN Back Barriers (2011, methodology): “83N/GaN heterostructure was proposed by Kuzmík, extensive research on this material system has been conducted as an alternative for AlGaN/GaN-based high-electron-mobility transistors (HEMTs) [1].”
• 205-GHz (Al,In)N/GaN HEMTs (2010, background): “AlInN/GaN HEMTs with a 55-nm gate footprint display a cutoff frequency fT = 205 GHz, the highest ever achieved for GaN-based HEMTs to date.”
• InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz (2012, background): “83N/AlN/GaN heterostructures offer higher charge density for thin barrier thicknesses (< 10 nm) due to stronger polarization discontinuity than the conventional AlGaN/GaN heterostructure [4]–[13], making them suitable for ultrascaled HEMTs.”
• Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance (2010, background): “attention recently due to their demonstrated superior thermal stability [1] and high drain current density [2].”
• 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment (2011, background): “A lattice-matched In0.17Al0.83N/GaN heterostructure can be an ideal alternative to overcome these challenges and has great potential to further improve device performance [ 4 ].”
• 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier (2011, background): “85N back barrier is used, instead of an AlGaN buffer, to increase the carrier confinement in InAlN/GaN HEMTs on SiC.”