Carrier statistics and quantum capacitance of graphene sheets and ribbons

By T. Fang, A. Konar, Huili Grace Xing, Debdeep Jena. 2007

677 citations recorded by the source corpus.

In this work, fundamental results for carrier statistics in graphene two-dimensional sheets and nanoscale ribbons are derived. Though the behavior of intrinsic carrier densities in two-dimennsional graphene sheets is found to differ drastically from traditional semiconductors, very narrow (sub-10nm) ribbons are found to be similar to traditional narrow-gap semiconductors. The quantum capacitance, an important parameter in the electrostatic design of devices, is derived for both two-dimensional graphene sheets and nanoribbons.

Subfields: Materials Chemistry, Physical and Theoretical Chemistry

View Paper: https://www.semanticscholar.org/paper/baebe378675fecc1bc1951057ad725de134be271

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Materials Chemistry

1. E. Rossi
2. E. Hwang
3. S. Adam
4. Frank Schwierz
5. Alan C. Seabaugh
6. Qin Zhang
7. J. Xia
8. Julien Perruisseau-Carrier

In Physical and Theoretical Chemistry

1. Alan C. Seabaugh
2. Qin Zhang
3. Frank Schwierz
4. S. Adam
5. Debdeep Jena
6. E. Hwang
7. E. Rossi
8. Nongjian Tao

Citations in the corpus

• Measurement of the quantum capacitance of graphene. (2009, background): “An expression for the quantum capacitance of a perfect graphene sheet has been derive”
• Low-Voltage Tunnel Transistors for Beyond CMOS Logic (2010, positive): “The GNR is a special 1-D semiconductor material in which the E–k relation is not parabolic but given by E ¼� �F ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi 2 þ k 2 p [ 70 ].”
• Electronic transport in two-dimensional graphene (2010, background): “Taking into account the quantum capacitance in graphene the doping induced by the external gate voltage Vg is given by the relation (Fang et al., 2007; FernandezRossier et al., 2007): n = CVg e + nQ [ 1− √ 1 + CVg enQ ] ; (1.15) where C is the gate capacitance, e the absolute value of the electron…”
• Sinusoidally Modulated Graphene Leaky-Wave Antenna for Electronic Beamscanning at THz (2013, background): “, assuming a relative thick gate oxide [23], the carrier density is related to graphene chemical potential as”
• Graphene Transistors: Status, Prospects, and Problems (2013, background): “When modeling the gate capacitance CG and the dependence of the sheet density on the gate voltage in graphene MOSFETs, the effect of the quantum capacitance needs to be taken into account [43].”