Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2

By Wenshen Li, K. Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing. IEEE Electron Device Letters, 2020

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We report the realization of field-plated vertical Ga₂O₃ trench Schottky barrier diodes (SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With employment of field plate, a breakdown voltage (BV) of 2.89 kV is achieved, which is ~ 500 V higher than those without field plate. Trench sidewall depletion is observed, and the average depletion width is extracted using an analytical model. The trench SBDs have a differential specific on-resistance (<inline-formula> <tex-math notation="LaTeX">$\text {R}_{\text {on,sp}}$ </tex-math></inline-formula>) of 10.5 (8.8) <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega ~\cdot {\mathrm {cm}}^{\text {2}}$ </tex-math></inline-formula> from DC (pulsed) measurements, which leads to a Baliga’s figure-of-merit (<inline-formula> <tex-math notation="LaTeX">${\mathrm {BV}}^{{2}}/\text {R}_{\text {on,sp}}$ </tex-math></inline-formula>) of 0.80 (0.95) GW/cm²— the highest among Ga₂O₃ power devices to date.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

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