Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys
By Debdeep Jena, S. Heikman, D. Green, Ilan B. Yaacov, R. Coffie, Huili Grace Xing, Stacia Keller, Steven P. DenBaars, J. Speck, Umesh K. Mishra. 2002
197 citations recorded by the source corpus.
We present the concept and experimental realization of polarization-induced bulk electron doping in III–V nitride semiconductors. By exploiting the large polarization charges in the III–V nitrides, we are able to create wide slabs of high-density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization-doped electron distributions than comparable shallow donor-doped structures, especially at low temperatures due to the removal of ionized impurity scattering. Such polarization-induced three-dimensional electron slabs can be utilized in a variety of device structures owing to their high conductivity and continuously changing energy gap.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/48ba6d0d7ec60c71a7b11458fb577e806de19fd2
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement (2008, background): “done over a thick layer in order to reduce polarization-induced doping [15] and to avoid the generation of a secondary channel in the buffer layer.”