Unique prospects for graphene-based terahertz modulators
By B. Sensale‐Rodriguez, T. Fang, R. Yan, M. Kelly, Debdeep Jena, Lei Liu, Huili Grace Xing. 2011
215 citations recorded by the source corpus.
The modulation depth of two-dimensional electron-gas (2DEG) based terahertz (THz) modulators using AlGaAs/GaAs hetero-structures with metal gates is inherently limited to <30%. The metal gate not only attenuates the THz signal but also severely degrades modulation depth. Metal losses can be significantly reduced employing an alternative material with tunable conductivity. Graphene presents a unique solution to this problem due to its symmetric band structure and extraordinarily high hole mobility. In this work, we show that it is possible to achieve a modulation depth of >90% while simultaneously minimizing signal attenuation to <5% by tuning the Fermi level at its Dirac point. VC 2011 American Institute of Physics. [doi:10.1063/1.3636435]
Subfields: Astronomy and Astrophysics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c0222769b56dd57fccb975da5a6dc82f2d4f453d
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Citations in the corpus
- THz Wave Modulators: A Brief Review on Different Modulation Techniques (2013, background): “More recently, it was found that graphene can be superior to semiconductors when used as an electrically drivenmodulator [64–68].”
- Graphene Photonics, Plasmonics, and Optoelectronics (2014, background): “Graphene-based modulators operating in the terahertz range have also been proposed [96].”