Intrinsic electron mobility limits in β-Ga2O3
By N. Ma, N. Tanen, A. Verma, Zhi Guo, T. Luo, Huili Grace Xing, Debdeep Jena. 2016
357 citations recorded by the source corpus.
By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in β–Ga2O3 to <200 cm2/V s at 300 K for donor doping densities lower than ∼1018 cm–3. Despite similar electron effective mass of β–Ga2O3 to GaN, the electron mobility is ∼10× lower because of a massive Frohlich interaction, due to the low phonon energies stemming from the crystal structure and strong bond ionicity. Based on the theoretical and experimental analysis, we provide an empirical expression for electron mobility in β–Ga2O3 that should help calibrate its potential in high performance device design and applications.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/3b7a0257508a4f0dbfde21953611e13886ad8e72
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Citations in the corpus
- Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, background): “9 eV [1], a high expected breakdown electric field up to 8 MV/cm [2] and a decent intrinsic electron mobility limit of 250 cm2/Vs [3], which enables high-voltage and high-power operation.”
- High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm (2016, background): “8 cm2/V·s from the gmax, which is still a factor of 2 lower than the theoretical limit [17].”