Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

By W. Hwang, M. Remškar, R. Yan, V. Protasenko, K. Tahy, S. Chae, Pei Zhao, A. Konar, Huili Grace Xing, Alan C. Seabaugh and 1 more. 2012

271 citations recorded by the source corpus.

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer crystal semiconductor WS2. The Schottky-barrier FETs demonstrate ambipolar behavior and a high (∼105×) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the ultrathin layered semiconductor crystal material. The FETs also show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the chemical synthesis, and flexibility of layered semiconductor crystals such as WS2 make them attractive for future electronic and optical devices.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/777a6f12f58365ecfa29d347cff4aad968092f3e

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In Materials Chemistry

1. Alan C. Seabaugh
2. Wilfried E. Haensch
3. Debdeep Jena
4. C. D. Walle
5. Huili Grace Xing
6. Z. Galazka

Citations in the corpus

• High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes (2013, background): “Though nanoscale materials such as nanotubes [14], graphene [12], and transition metal dichalcogenides [15-18] have been actively studied for low-power electronic switching applications, the initial findings reported here show that nanoscale”