Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering
By T. Fang, A. Konar, Huili Grace Xing, Debdeep Jena. 2008
230 citations recorded by the source corpus.
The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons and from acoustic phonons are as important as line-edge roughness scattering. The relative importance of these scattering mechanisms varies with the temperature, Fermi-level location, and the width of the ribbons. Based on the analysis, strategies for improvement of low-field mobility are described.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/03ad124a5ef791cd621bef8b10c154706f0b7845
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In Atomic and Molecular Physics, and Optics
In Materials Chemistry
Citations in the corpus
- Impact of Size Effect on Graphene Nanoribbon Transport (2010, background): “Carrier mobility in graphene is limited by various scattering mechanisms[5, 10]: (i) intrinsic scattering that limits mobility to 200,000 cm(2)/V-s, (ii) SiO2 phonon scattering that limits mobility to 40,000 cm(2)/V-s, (iii) impurity scattering, and (iv) LER scattering.”